Tuesday, July 23, 2013

1307.5811 (I. S. Burmistrov et al.)

Tunneling into the localized phase near Anderson transitions with
Coulomb interaction

I. S. Burmistrov, I. V. Gornyi, A. D. Mirlin
We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a crossover to a soft Coulomb gap at low energies. The single-particle excitations experience a localization transition (which belongs to the non-interacting universality class) at an energy $E=\pm E_c$. The mobility edge $E_c$ scales with the distance $\mu_c-\mu$ from the interacting critical point according to $E_c\propto (\mu_c-\mu)^{\nu z}$, where $\nu$ and $z$ are the localization-length and the dynamical critical exponents. Local TDOS shows strong fluctuations and long-range correlations which reflect the multifractality associated with interacting and non-interacting fixed points as well the localization of low-energy excitations.
View original: http://arxiv.org/abs/1307.5811

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