A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov, P. V. Semenikhin
Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.
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http://arxiv.org/abs/1301.6026
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