1211.6769 (J. Botimer et al.)

Robust Surface Hall Effect and Nonlocal Transport in SmB6: Indication
for an Ideal Topological Insulator    [PDF]

J. Botimer, D. J. Kim, S. Thomas, T. Grant, Z. Fisk, Jing Xia

We report in large crystals of SmB6 the surface Hall effects and non-local transport, which are robust against perturbations including mechanical abrasion. The experimental data agree quantitatively with the model of an ideal TI. Using vacuum annealing, we have achieved a surface carrier mobility of 72,000 cm2/Vs, highlighting its potential for low-power electronics. Unlike existing weakly interacting TI materials, the strong electron correlation in SmB6 may give rise to emergent topological quantum phases useful for spintronics and protected quantum computers.

View original: http://arxiv.org/abs/1211.6769