1210.2763 (W. L. Lim et al.)

Field-effect diode based on electron-induced Mott transition in NdNiO3    [PDF]

W. L. Lim, E. J. Moon, J. W. Freeland, D. J. Meyers, M. Kareev, J. Chakhalian, S. Urazhdin

We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.

View original: http://arxiv.org/abs/1210.2763