1210.0387 (V. V. Vanovsky et al.)

Spin transition in the fractional quantum Hall regime: Effect of wave
function extent    [PDF]

V. V. Vanovsky, V. S. Khrapai, A. A. Shashkin, V. Pellegrini, L. Sorba, G. Biasiol

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the g factor change due to nonparabolicity and the change of the Coulomb energy are approximately the same. The observed relative shift of B* is described with no fitting parameters.

View original: http://arxiv.org/abs/1210.0387