Tuesday, September 18, 2012

1209.3676 (Brian C. Sales et al.)

Transport, Thermal, and Magnetic Properties of the Quasi-One-Dimensional
Narrow-Gap Semiconductor CrSb2
   [PDF]

Brian C. Sales, Andrew F. May, Michael A. McGuire, Matthew B. Stone, David J. Singh, David Mandrus
Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements below 100K, only one phase transition is found in the temperature range from 2 to 750K corresponding to long-range antiferromagnetic order below T_N ~ 273K. Many of the unusual low temperature properties can be explained by the thermal depopulation of carriers from the conduction band into a low mobility band located approximately 16 meV below the conduction band edge, as deduced from the Hall effect data. In analogy with what occurs in Ge, the low mobility band is likely an impurity band. The Seebeck coefficient, S, is large and negative for temperatures from 2 to 300 K ranging from approximately -70 uV/K at 300K to -4500 uV/K at 18K. A large maximum in |S| at 18K is likely due to phonon drag with the abrupt drop in S below 18K related to the rapid thermal depopulation of carriers from the conduction band. The large thermal conductivity between 10 and 20K (~350W/m-K) is consistent with this interpretation, as are detailed calculations of the Seebeck coefficient made using the complete calculated electronic structure. These data are compared to data reported for FeSb2, which crystallizes in the same marcasite structure, and FeSi, another unusual narrow-gap semiconductor.
View original: http://arxiv.org/abs/1209.3676

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