Xiao-Long Zhang, Lan-Feng Liu, Wu-Ming Liu
Based on ab initio calculations we engineer quantum anomalous Hall effect in silicene via doping 3d transition metals (TM). We show that there exists a stable quantum anomalous Hall effect (QAHE) in Vanadium doped silicene using both analytical model and Wannier interpolation. We also predict the existence of quantum valley Hall effect (QVHE) and electrically tunable topological states in certain TM-silicene system where the band inversion occurs. Our findings provide new schemes for the realization of the QAHE and electrically controllable topological states for practical application.
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http://arxiv.org/abs/1301.4081
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