1301.4043 (M. K. Srivastava et al.)

Carrier localization and out of plane anisotropic magnetoresistance in
$Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films    [PDF]

M. K. Srivastava, A. Kaur, H. K. Singh

The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.

View original: http://arxiv.org/abs/1301.4043