Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel, Max Bichler, Gregor Koblmueller, Matthew Brahlek, Namrata Bansal, Seongshik Oh, H. Dennis Drew
We report gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3. The properties of a single topological interface state are measured from the vicinity of the Dirac point to above the conduction band edge. A precipitous drop in the scattering rate with Fermi energy indicates decoupling of the surface states from bulk states and a shift of the Dirac cone towards mid-gap. Near the Dirac point, the mobility is 3500 cm^2/Vsec with measured potential fluctuations of 60 meV.
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http://arxiv.org/abs/1208.3881
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