1206.1239 (Ion Garate et al.)

Weak Localization and Antilocalization in Topological Insulator Thin
Films with Coherent Bulk-Surface Coupling    [PDF]

Ion Garate, Leonid Glazman

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

View original: http://arxiv.org/abs/1206.1239