A. Ballestar, J. Barzola-Quiquia, S. Dusari, P. Esquinazi R. R. da Silva, Y. Kopelevich
We have studied the temperature and magnetic field dependence of the
electrical resistance of mesoscopic, tens of nanometers thick multigraphene
samples as a function of a bias voltage applied perpendicular to the graphene
planes. We found that the resistance changes asymmetrically with the bias
voltage sign. For large and negative bias voltages the resistance shows a
non-percolative superconducting-like transition at $T \sim 15 ... 20 $K. A
large enough magnetic field suppresses the transition.
View original:
http://arxiv.org/abs/1202.3327
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